ds30173 rev. 4 - 2 1 of 3 MMST5551 www.diodes.com diodes incorporated MMST5551 npn small signal surface mount transistor epitaxial planar die construction complementary pnp type available (mmst5401) ideal for medium power amplification and switching ultra-small surface mount package also available in lead free version characteristic symbol value unit collector-base voltage v cbo 180 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 6.0 v collector current - continuous (note 1) i c 200 ma power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 c/w operating and storage and temperature range t j ,t stg -55 to +150 c features maximum ratings @ t a = 25 c unless otherwise specified a m j l e d b c h k g b e c mechanical data case: sot-323, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 4, on page 2 terminal connections: see diagram marking (see page 2) : k4n ordering & date code information: see page 2 weight: 0.006 grams (approx.) sot-323 dim min max a 0.25 0.40 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal e 0.30 0.40 g 1.20 1.40 h 1.80 2.20 j 0.0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.18 0 8 all dimensions in mm e b c note: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
ds30173 rev. 4 - 2 2 of 3 MMST5551 www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 2) collector-base breakdown voltage v (br)cbo 180 v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 160 v i c = 1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo 6.0 v i e = 10 a, i c = 0 collector cutoff current i cbo 50 na a v cb = 120v, i e = 0 v cb = 120v, i e = 0, t a = 100 c emitter cutoff current i ebo 50 na v eb = 4.0v, i c = 0 on characteristics (note 2) dc current gain h fe 80 80 30 250 i c = 1.0ma, v ce = 5.0v i c = 10ma, v ce = 5.0v i c = 50ma, v ce = 5.0v collector-emitter saturation voltage v ce(sat) 0.15 0.20 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma base- emitter saturation voltage v be(sat) 1.0 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma small signal characteristics output capacitance c obo 6.0 pf v cb = 10v, f = 1.0mhz, i e = 0 small signal current gain h fe 50 250 v ce = 10v, i c = 1.0ma, f = 1.0khz current gain-bandwidth product f t 100 300 mhz v ce = 10v, i c = 10ma, f = 100mhz noise figure nf 8.0 db v ce = 5.0v, i c = 200 a, r s = 1.0k f = 1.0khz ordering information device packaging shipping MMST5551-7 sot-323 3000/tape & reel (note 3 & 4) notes: 2. short duration test pulse used to minimize self-heating effect. 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number a bove. example: MMST5551-7-f. marking information k4n ym k4n= product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september date code key year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd
ds30173 rev. 4 - 2 3 of 3 MMST5551 www.diodes.com 1 10 1000 100 1 10 100 f , gain bandwidth product (mhz) t i , collector current (ma) c fig. 5, gain bandwidth product vs. collector current v=5v ce 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 . 0 0.1 1 10 100 v , base emitter voltage (v) be(on) i , collector current (ma) c fig. 4, base emitter voltage vs. collector current v=5v ce t = 150c a t = 25c a t=-50c a 1 10 1000 100 1 10 100 h , dc current fe gain (normalized) i , collector current (ma) c fig. 3, dc current gain vs collector current v=5v ce t = 150c a t = 25c a t = -50c a 0.04 0.05 0.06 0.07 0.08 0.09 0 . 1 5 0.14 0.13 0.12 0.11 0.10 1 10 100 1000 v , collector to emitter ce(sat) saturation voltage (v) i , collector current (ma) c fig. 2, collector emitter saturation voltage vs. collector current i c i b =10 t = 150c a t = 25c a t = -50c a 0 50 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 1, max power dissipation vs ambient tem p erature 100 150 200 0
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